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Scientists were able to create a new type of RAM

Ученым удалось создать новый тип оперативной памятиRussian scientists managed to create a new chip.

Researchers from Moscow Institute of physics and technology (MIPT), together with their colleagues from the Institute of Radioengineering and electronics of RAS named after Nyquist has developed and manufactured prototypes of a new type of magnetic computer memory with random access. The use of such a memory will not only reduce the computational systems of energy, its volatile nature will allow us to realize instant startup of these systems after inclusion.

Note that the random access memory (Random Access Memory, RAM) is one of the basic components of all computer systems any computer, smartphone or even MP3 player. The most common type of RAM is dynamic memory DRAM, the cell which has the most simple structure and consists of a transistor and an electric condenser. The transistor is used to control the charging of the capacitor, and the charge level of the capacitor is interpreted as a logical 1 or 0, according dailytechinfo.org.

“DRAM technology has advanced greatly in recent years. Memory modules are becoming faster and larger. However, this type of memory has a very low efficiency of use of energy and requires constant regeneration, this issue remains unresolved to date,” – says Sergey Nikitov, head of the research project “Developed by us the magnetic memory cells have the energy efficiency of operations, read / write 10 thousand times greater than conventional DRAM cell memory”.

Cell magnetoelectric memory (magnetoelectric memory, MELRAM) consist of two components of different nature. The first component is a piezoelectric component. We remind our readers that the piezoelectric effect is the ability of some materials to change their shape under the influence of electric current and to produce an electric current under the influence of applied mechanical force.

The second component of the memory cell MELRAM is a multilayer structure, characterized by high magnetoelastic indicator of dependence of magnetization from mechanical deformation. In this case, the anisotropic structure of this component allows to magnetize it in a strictly specified direction. And two perpendicular directions of magnetization can be interpreted as logical 1 and 0. Unlike a dynamic memory cell MELRAM do not require constant regeneration and capable of retaining its state when unpowered.

“We have created prototypes of magnetic memory cells which have a size of about one millimeter,” says Anton chumps, one of the researchers, “However, the structure of this cell is easy to miniaturise to the nanoscale level, to dimensions comparable to the cell size of conventional memory”.

It should be noted that scientists tried to create samples MELRAM memory, faced with an insoluble problem, for reading recorded in the cell information used miniature magnetic field sensors. This approach worked, but made it impossible to miniaturization of the structure of the memory cell to an acceptable level. To solve this problem Russian scientists developed a relatively simple technology electrical readout of the information recorded in the memory cell. This technology uses short pulses of weak electrical current, which can not paramagnetic cell, but on the parameters which are influenced by the direction of magnetization of the material of the cell.

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